AI & ChatGPT searches , social queries for GATE OXIDE
Search references for GATE OXIDE. Phrases containing GATE OXIDE
See searches and references containing GATE OXIDE!
Search references for GATE OXIDE. Phrases containing GATE OXIDE
See searches and references containing GATE OXIDE!GATE OXIDE
Type of field-effect transistor
transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of
MOSFET
Dielectric layer of a MOSFET isolating the gate terminal from the underlying silicon
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying
Gate_oxide
Semiconductor Fabrication Technique
technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect
Self-aligned_gate
Failure mechanism in MOSFETs
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide
Time-dependent gate oxide breakdown
Time-dependent_gate_oxide_breakdown
Phenomenon in electronics manufacturing
The antenna effect, more formally plasma induced gate oxide damage, is an effect that can potentially cause yield and reliability problems during the manufacture
Antenna_effect
Material with a high permittivity relative to silicon dioxide
kappa). Silicon dioxide (SiO2) has been used as a gate oxide material for decades. As metal–oxide–semiconductor field-effect transistors (MOSFETs) have
High-kappa_dielectric
Increase in gate leakage current of MOSFETs
increase in the gate leakage current of a MOSFET, used in semiconductor physics. It occurs due to defects created in the gate oxide during electrical
Stress-induced leakage current
Stress-induced_leakage_current
Field-effect transistor
silicon-substrate FETs, the gate dielectric is almost always silicon dioxide (called "gate oxide"), since thermal oxide has a very clean interface. However
Gate_dielectric
MOSFET that can handle significant power levels
A power MOSFET is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other
Power_MOSFET
Write once computer memory
developed a MOS gate oxide breakdown antifuse in 1979. A dual-gate-oxide two-transistor (2T) MOS antifuse was introduced in 1982. Early oxide breakdown technologies
Programmable_ROM
Capacitance of the gate terminal of a field-effect transistor
measurement can include gate–source and gate–drain overlap capacitances. Other scalings are not uncommon; the voltages and gate oxide thicknesses have not
Gate_capacitance
Manufacturing process used to create integrated circuits
ellipsometry or reflectometry is used to tightly control the thickness of gate oxide, as well as the thickness, refractive index, and extinction coefficient
Semiconductor device fabrication
Semiconductor_device_fabrication
adjusting the gate oxide thickness, gate oxide dielectric constant (material type), or dopant concentration in the channel region beneath the gate oxide. A common
Multi-threshold_CMOS
Technology for constructing integrated circuits
Complementary metal–oxide–semiconductor (CMOS /ˈsiːmɒs/ SEE-moss) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process
CMOS
21st-century American engineer
Electrical and Electronics Engineers (IEEE) in 2016 for his contributions to gate oxide reliability of CMOS devices. "2016 elevated fellow" (PDF). IEEE Fellows
Ernest_Wu
Feature of a MOSFET's current–voltage characteristic
{\displaystyle C_{d}} = depletion layer capacitance C o x {\displaystyle C_{ox}} = gate-oxide capacitance k T q {\displaystyle {kT \over q}} = thermal voltage The minimum
Subthreshold_slope
MOS field-effect transistor with more than one gate
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET)
Multigate_device
Semiconductor structure
A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel
Metal_gate
Type of transistor
types: junction FET (JFET) and metal–oxide–semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the current by
Field-effect_transistor
Test of MOS devices
a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric
QBD_(electronics)
Property of a field-effect transistor
electric field across the gate oxide. Before scaling the design features down to 90 nm, a dual-oxide approach for creating the oxide thickness was a common
Threshold_voltage
Variation of threshold voltage in polycrystalline silicon materials
gate contact may be of polysilicon or metal, previously polysilicon was chosen over metal because the interfacing between polysilicon and gate oxide (SiO2)
Polysilicon_depletion_effect
Scientific model in solid-state physics
MOSFETs (metal–oxide–semiconductor field-effect transistors). When the transistor is in inversion mode, the electrons underneath the gate oxide are confined
Two-dimensional_electron_gas
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing
List of semiconductor scale examples
List_of_semiconductor_scale_examples
Phenomenon in solid-state electronic devices
to tunnel through the thin gate oxide to show up as gate current, or as substrate leakage current. In a MOSFET, when a gate is positive, and the switch
Hot-carrier_injection
These new materials had a lower equivalent oxide thickness so they could retain an appropriate gate oxide thickness to prevent leakage current while also
Equivalent_oxide_thickness
Solid-state electrically operated switch also used as an amplifier
construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which
Transistor
Type of semiconductor
voltage of the device. This electric field launches electrons into the gate oxide and consequently, the trapped electrons shift the threshold voltage of
VMOS
Transfer of electrical energy through a usually-insulating boundary
the junction or the gate oxide suffers permanent damage not sufficient to cause a catastrophic failure. Overstressing the gate oxide can lead to stress-induced
Leakage_(electronics)
Type of electronic noise that occurs in semiconductors
type of electronic noise that occurs in semiconductors and ultra-thin gate oxide films. It is also called random telegraph noise (RTN), popcorn noise,
Burst_noise
Thin-film deposition technique that deposits one 1-atom thick layer at a time
permittivity) gate oxides, high-κ memory capacitor dielectrics, ferroelectrics, and metals and nitrides for electrodes and interconnects. In high-κ gate oxides, where
Atomic_layer_deposition
Technology in semiconductor manufacturing
For a PDSOI P-MOSFET the sandwiched n-type film between the gate oxide (GOX) and buried oxide (BOX) is large, so the depletion region can't cover the whole
Silicon_on_insulator
Integrated circuit behavior verification process
does take place and permanent physical damage results to thin transistor gate oxide. This rapid and destructive phenomenon is known as the antenna effect
Physical_verification
Ways electronic components fail and prevention measures
stress on the thin dielectric layer; a stressed oxide can shatter and fail immediately. If the gate oxide itself does not fail immediately, failure can
Failure of electronic components
Failure_of_electronic_components
Colourless non-flammable greenhouse gas
Nitrous oxide (dinitrogen oxide or dinitrogen monoxide), commonly known as laughing gas or nitrous, among others, is a chemical compound, an oxide of nitrogen
Nitrous_oxide
Semiconductor memory technology
layer is insulated from the channel by a tunnel oxide layer and from the control gate by a gate oxide layer. Materials for all of these layers are the
Charge_trap_flash
physics across a range of device technologies. His work includes studies of gate oxide breakdown, hot-carrier degradation, and electromigration in advanced CMOS
Joseph_B._Bernstein
Topics referred to by the same term
dielectric breakdown (or Time-dependent gate oxide breakdown), a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application
TDDB
Device performing a Boolean function
building logic gates uses diodes or transistors acting as electronic switches. Today, most logic gates are made from MOSFETs (metal–oxide–semiconductor
Logic_gate
Effect in field-effect transistors
between the source and the body widens the depletion layer beneath the gate oxide, increasing the amount of uncompensated doping ions exposed by the field
Body_effect
Computer memory used for small quantities of data
(polysilicon-oxynitride-nitride-oxide-silicon) structure with thickness of silicon dioxide less than 30 Å, and SIMOS (stacked-gate injection MOS) structure,
EEPROM
Chemical compound
"Stability and band offsets of nitrogenated high-dielectric-constant gate oxides". Applied Physics Letters. 84 (1): 106–108. Bibcode:2004ApPhL..84..106S
Lanthanum_oxide
Process of silicon transistors developing flaws over time as they are used
diagnose, and eventual failure. Charge trapping is related to time-dependent gate oxide breakdown, and manifests as an increase in resistance and threshold voltage
Transistor_aging
Technique for characterizing semiconductor materials and devices
metal–oxide–semiconductor structure is critical part of a MOSFET, controlling the height of potential barrier in the channel via the gate oxide. An n-channel
Capacitance–voltage_profiling
Electrical device
"Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide anti-fuse". IEEE Electron Device Letters. 24 (9): 589–591. Bibcode:2003IEDL
Antifuse
Iranian-American engineer
10 nanometer gate oxide thickness, using tungsten-gate technology. In 1988, he led an IBM team that demonstrated high-performance dual-gate CMOS devices
Bijan_Davari
Key reliability issue in MOSFETs
applied to the gate. More specifically, over time positive charges become trapped at the oxide-semiconductor boundary underneath the gate of a MOSFET. These
Negative-bias temperature instability
Negative-bias_temperature_instability
Computer memory technology
(floating-gate)" for the charge storage material. A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer
SONOS
Naturally occurring variation in transistor attributes
effect that the oxide thickness and implantation energy had on the threshold voltage of MOS devices. Sources of variations include: gate oxide thickness, random
Process variation (semiconductor)
Process_variation_(semiconductor)
Type of non-planar transistor
multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides
Fin_field-effect_transistor
Field-effect transistor made from carbon nanotubes
The silicon oxide substrate can be used as the gate oxide and adding a metal contact on the back makes the semiconducting CNT gateable. This technique
Carbon nanotube field-effect transistor
Carbon_nanotube_field-effect_transistor
DRAM reliability issue
to changes in the charge state of nearby defects, often located in the gate oxide. Both models have been supported by experimental evidence, suggesting
Variable_retention_time
compound. An oxide TFT is distinct from a metal oxide field effect transistor (MOSFET) where the word "oxide" refers to the insulating gate dielectric (normally
Oxide_thin-film_transistor
Semiconductor manufacturing processes
to the previous 7 nm process. Quantum tunnelling effects through the gate oxide layer on "7 nm" and "5 nm" transistors became increasingly difficult to
5_nm_process
Device measuring ionizing radiation exposure
radiation signal is permanently stored and is dose rate independent. Gate oxide of MOSFET which is conventionally silicon dioxide is an active sensing
Dosimeter
Advanced lithographic node used in volume CMOS semiconductor fabrication
dielectric (κ=2.25) Metal 1 pitch: 180 nm Nickel silicide source/drain Gate oxide thickness: 1.9 nm (n), 2.1 nm (p) There are actually two versions of the
65_nm_process
Type of MOSFET where the gate is electrically isolated
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect
Floating-gate_MOSFET
Taiwanese engineer (born 1952)
dissertation was titled, "Current, Field Stress-Induced Degradation in Thin Gate-Oxide MOSFETs". After obtaining a doctorate in electrical engineering, Liang
Liang_Mong_Song
Type of field-effect transistor
rapid oxidation in air to form pentacene-quinone. However if the pentacene is preoxidized, and the thus formed pentacene-quinone is used as the gate insulator
Organic field-effect transistor
Organic_field-effect_transistor
proportional to radiation dose. Alternate high-k gate dielectrics like hafnium oxide, hafnium dioxide and aluminium oxides are also proposed as radiation dosimeters
Electronic_personal_dosimeter
Very small devices that incorporate moving components
oxide etchant) or BHF (Buffered HF). They were first used in medieval times for glass etching. It was used in IC fabrication for patterning the gate oxide
MEMS
Graphics card line
density and speed, and the transistors have a slightly shorter gate length and thinner gate oxide. VSA-100 has a transistor count of roughly 14 million, compared
Voodoo_5
Digital imaging circuit
CCD. The gate oxide, i.e. the capacitor dielectric, is grown on top of the epitaxial layer and substrate. Later in the process, polysilicon gates are deposited
Charge-coupled_device
Chemical compound
Metal–oxide–semiconductor field-effect transistor (MOSFET) The HBT can be used in integrated injection logic (I2L). The earliest GaAs logic gate used Buffered
Gallium_arsenide
Form of digital logic family in integrated circuits
make and were therefore developed first — ionic contamination of the gate oxide from etching chemicals and other sources can very easily prevent (the
Depletion-load_NMOS_logic
The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET (metal–oxide–semiconductor field-effect transistor)
Metal–nitride–oxide–semiconductor transistor
Metal–nitride–oxide–semiconductor_transistor
Form of non-volatile memory used in computers and other electronic devices
two levels of thickness for a gate oxide in transistors, and using a mask to define where to deposit one thickness of oxide, and another mask to deposit
Read-only_memory
Type of solid state switch
metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor)
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Either of two concepts in computer engineering
with a 20 μm process. Their original MOSFET devices had a gate length of 20 μm and a gate oxide thickness of 100 nm. However, the nMOS devices were impractical
Logic_family
Class of devices for nanoscale functionality
Labs. In 1960, Atalla and Kahng at Bell Labs fabricated a MOSFET with a gate oxide thickness of 100 nm. In 1962, Atalla and Kahng fabricated a nanolayer-base
Nanoelectromechanical_systems
Form of digital logic family in integrated circuits
N-type metal–oxide–semiconductor) uses n-type (-) MOSFETs (metal–oxide–semiconductor field-effect transistors) to implement logic gates and other digital
NMOS_logic
Composite material consisting of ceramic fibers in a ceramic matrix
for these oxide CMC components is several times longer than for metals, which often deform. A further example is an oxide CMC lifting gate for a sintering
Ceramic_matrix_composite
Japanese electrical engineer
a Fellow of the IEEE in 2005, "for contributions to ultra-thin gate oxide metal oxide semiconductor field effect transistors". She was named a Fellow
Hisayo_Momose
Type of field-effect transistor
as the gate electrode. A voltage between substrate and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal–oxide–semiconductor
ISFET
American semiconductor company
programmable analog devices with a floating gate of polysilicon embedded in the device gate oxide. Gate trimming is performed by injecting a charge of
Advanced_Linear_Devices
Technique
mandrel is the MOSFET gate stack. The silicon nitride sidewall spacer is retained to protect the gate stack and underlying gate oxide during subsequent processing
Spacer_patterning
Electrical circuits operating on the nanometer scale
(MOSFET) with a 10 nm gate oxide thickness, using tungsten-gate technology. Multi-gate MOSFETs enabled scaling below 20 nm gate length, starting with
Nanocircuitry
Family of digital circuits
logic, from p-channel metal–oxide–semiconductor, is a family of digital circuits based on p-channel, enhancement mode metal–oxide–semiconductor field-effect
PMOS_logic
Early type of solid state computer memory
layer of oxide is grown over the channel, then a conductive (silicon or aluminum) gate electrode is deposited, and a further thick layer of oxide is deposited
EPROM
Water vapor used in industrial processes
industrial manufacturing processes that require oxidation or annealing. These processes include the growth of oxide layers on silicon wafers for the semiconductor
Ultra-high-purity steam for oxidation and annealing
Ultra-high-purity_steam_for_oxidation_and_annealing
Logic gate
gate using a 2-1 AOI gate. An XOR gate using a 2-2 OAI gate and negated inputs. The metal–oxide–semiconductor (CMOS) implementations of the XOR gate corresponding
XOR_gate
Entity that can be evaluated and is hard to predict
operational variations. Oxide rupture PUF is a type of PUF benefiting from randomness obtained from inhomogeneous natural gate oxide properties occurring
Types of physical unclonable function
Types_of_physical_unclonable_function
Beam of charged atoms (ions)
material. The most common application is to verify the integrity of the gate oxide layer in a CMOS transistor. A single excavation site exposes a cross section
Ion_beam
2001 family of microprocessors by IBM
GHz 1.3 GHz Power 115 W 1.5 V @ 1.1 GHz Transistors 174 million Gate L 90 nm Gate oxide 2.3 nm Metal-layer pitch thickness M1 500 nm 310 nm M2 630 nm 310 nm
POWER4
Two major types of field effect transistors
transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements
Depletion and enhancement modes
Depletion_and_enhancement_modes
Electronic component
were constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in antiparallel configuration. At low voltage the varistor
Varistor
failure analysis to locate buried diffusion regions, damaged junctions and gate oxide shorts. The OBIC technique may be used to detect the point at which a
Optical_beam-induced_current
Egyptian engineer (1924–2009)
Atalla and Kahng fabricated the first MOSFET with a gate oxide thickness of 100 nm, along with a gate length of 20 μm. In 1962, Atalla and Kahng fabricated
Mohamed_M._Atalla
Type of iron oxide
Rust is an iron oxide, a usually reddish-brown oxide formed by the reaction of iron and oxygen in the catalytic presence of water or air moisture. Rust
Rust
Nonlinear two-terminal fundamental circuit element
expression. This power characteristic differs fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based. Unlike the transistor
Memristor
As transistors become smaller, their power density remains constant
{\displaystyle C_{\text{ox}}} : oxide capacitance – the capacitance per unit area of the gate dielectric layer (the oxide layer) ε ox {\displaystyle \varepsilon
Dennard_scaling
Mechanical design approach
IPC APEX Expo, Las Vegas, NV, April 2011 Schuegraf and Hu, "A Model for Gate Oxide Breakdown", IEEE Trans. Electron Dev., May 1994. Takeda, E. Suzuki, N
Physics_of_failure
Array of logic gates that are reprogrammable
Spartan FPGA from Xilinx A field-programmable gate array (FPGA) is a type of configurable integrated circuit that can be repeatedly programmed after manufacturing
Field-programmable_gate_array
Chemical compound
advanced metal–oxide–semiconductor devices. Hafnium-based oxides were introduced by Intel in 2007 as a replacement for silicon oxide as a gate insulator in
Hafnium(IV)_oxide
Integrated circuit customized for a specific task
Complementary metal–oxide–semiconductor (CMOS) technology opened the door to the broad commercialization of gate arrays. The first CMOS gate arrays were developed
Application-specific integrated circuit
Application-specific_integrated_circuit
Lithographic technique that uses X-rays instead of light
partly to the long range of the Coulomb force. Insulating films like gate oxides and resists have been observed to charge to a positive or negative potential
X-ray_lithography
Process in microfabrication
degrades the insulating properties of gate oxides (specifically, sodium ions can migrate in and out of the gate, changing the threshold voltage of the
Photolithography
shrunk for the 0.55 μm CMOS14A process. This process has 120-angstrom gate oxide that did not tolerate 5.0 V operation. A 3.3 V power supply did not enable
PA-7200
demonstrated in the gate oxide and thin films used in transistors as early as the 1960s, but it was not until the late 1990s that MOSFETs (metal–oxide–semiconductor
History_of_nanotechnology
Field-effect transistor device
substrate, such as glass. This differs from the conventional bulk metal-oxide-semiconductor field-effect transistor (MOSFET), where the semiconductor
Thin-film_transistor
GATE OXIDE
GATE OXIDE
GATE OXIDE
GATE OXIDE
GATE OXIDE
GATE OXIDE
GATE OXIDE
GATE OXIDE
GATE OXIDE