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Type of junction-gate field effect transistor
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and
Static_induction_transistor
Transistor with four active terminals
A tetrode transistor is any transistor having four active terminals. There were two types of tetrode transistor developed in the early 1950s as an improvement
Tetrode_transistor
Type of bipolar junction transistor
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA
Alloy-junction_transistor
Device that prevents a transistor from saturating
Schottky-clamped transistor. Standard transistor–transistor logic (TTL) uses transistors as saturated switches. A saturated transistor is turned on hard
Schottky_transistor
Type of transistor
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than
Diffused_junction_transistor
Type of thyristor device
which was its high forward blocking voltage. Static induction transistor MOS composite static induction thyristor Li, Siyuan; Liu Su; Yang, Jianhong;
Static_induction_thyristor
Japanese physicist (1926–2018)
inventions since the 1950s, including the PIN diode, static induction transistor, static induction thyristor, SIT/SITh. His inventions contributed to the
Jun-ichi_Nishizawa
Multi-transistor electronics configuration
bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified
Darlington_transistor
Semiconductor light source
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Light-emitting_diode
drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered
Drift-field_transistor
Type of solid state switch
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded
Ballistic deflection transistor
Ballistic_deflection_transistor
Type of field-effect transistor
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations
Chemical field-effect transistor
Chemical_field-effect_transistor
Type of field-effect transistor
A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor)
MESFET
Form of transistor that emits light
A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.[citation needed]
Light-emitting_transistor
Type of field-effect transistor
Watanabe applied for a patent for a similar device in 1950 termed static induction transistor (SIT). The SIT is a type of JFET with a short channel. High-speed
JFET
Discrete device in an electronic system
nanotube field-effect transistor) JFET (junction field-effect transistor) – N-channel or P-channel SIT (static induction transistor) MESFET (metal semiconductor
Electronic_component
Type of transistor
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled
Unijunction_transistor
Experimental transistor
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Type of field-effect transistor
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum
Organic field-effect transistor
Organic_field-effect_transistor
Transistor using different semiconductor materials
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
First successful type of transistor, developed in 1947
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and
Point-contact_transistor
Field-effect transistor device
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin-film deposition. TFTs are grown on
Thin-film_transistor
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
List_of_RF_connector_types
Primitive type of bipolar junction transistor
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948
Grown-junction_transistor
Electronic component that exploits the electronic properties of semiconductor materials
Three-terminal devices: Bipolar transistor Darlington transistor Field-effect transistor Insulated-gate bipolar transistor (IGBT) Silicon-controlled rectifier
Semiconductor_device
Type of field-effect transistor
metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated
MOSFET
Pictogram used to represent various electrical and electronic devices or functions
electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These
Electronic_symbol
Type of vacuum tube; early radio detector
radars, and early digital computers for 50 years, until the advent of the transistor in the 1950s. Fleming sued De Forest for infringing his valve patents
Fleming_valve
Type of voltage regulator
output transistor. The shunt regulator works by providing a path from the supply voltage to ground through a variable resistance (the main transistor is in
Linear_regulator
Four-layer solid-state current-controlling device
short-circuit the anode and cathode momentarily with a push-button switch or transistor across the junction. When a negative voltage is applied to the anode and
Silicon_controlled_rectifier
Type of field-effect transistor
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate
Fe_FET
DC linear voltage regulator
{R_{1}}{R_{2}}}\right)V_{\text{ref}}\ .} If a bipolar transistor is used, as opposed to a field-effect transistor or JFET, significant additional power may be
Low-dropout_regulator
Theoretical transistor
A nanoscale vacuum-channel transistor (NVCT) is a transistor in which the electron transport medium is a vacuum, much like a vacuum tube. In a traditional
Nanoscale vacuum-channel transistor
Nanoscale_vacuum-channel_transistor
Type of transistor
junction field-effect transistor (JFET). A JFET was first patented by Heinrich Welker in 1945. The static induction transistor (SIT), a type of JFET with
Field-effect_transistor
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls
History_of_the_transistor
Diode that allows current to flow in the reverse direction at a specific voltage
silicon transistor at around −2 mV/°C, so in a simple regulating circuit where the 4.7 V diode sets the voltage at the base of an NPN transistor (i.e. their
Zener_diode
Type of field-effect transistor
high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating
High-electron-mobility transistor
High-electron-mobility_transistor
Central computer component that executes instructions
in large quantities. This standardization began in the era of discrete transistor mainframes and minicomputers, and has rapidly accelerated with the popularization
Central_processing_unit
A pentode transistor is any transistor having five active terminals. One early pentode transistor was developed in the early 1950s as an improvement over
Pentode_transistor
Semiconductor device
development of the GTO, and insulated-gate bipolar transistors (IGBT), which are members of the transistor family. They are also used in the starter circuits
Gate_turn-off_thyristor
Junction-Less nanowire transistor (JLNT) is a type of Field-effect transistor (FET) in which the channel consists of one or more nanowires and does not
Junctionless nanowire transistor
Junctionless_nanowire_transistor
Type of semiconductor
unijunction transistor (PUT) is a three-lead electronic semiconductor device which is similar in its characteristics to a unijunction transistor (UJT), except
Programmable unijunction transistor
Programmable_unijunction_transistor
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the
Fin_field-effect_transistor
Bipolar junction transistor operated in the avalanche breakdown region
"traditional" avalanche transistors. In this section, the I C − V C E {\displaystyle I_{C}-V_{CE}} static characteristic of an avalanche transistor is calculated
Avalanche_transistor
Vacuum tube used to generate microwaves
electrons in the beam matches the relative amplitude of the RF signal in the induction system. The electron current is a function of the details of the gun,
Backward-wave_oscillator
Family of digital circuits
on p-channel, enhancement mode metal–oxide–semiconductor field-effect transistors (MOSFETs). In the late 1960s and early 1970s, PMOS logic was the dominant
PMOS_logic
Highly sensitive semiconductor electronic device
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Avalanche_photodiode
Technology for constructing integrated circuits
characteristics of CMOS devices are high noise immunity and low static power consumption. Since one transistor of the MOSFET pair is always off, the series combination
CMOS
MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI-thyristor. The SI
MOS composite static induction thyristor
MOS_composite_static_induction_thyristor
Diode that emits light from an organic compound
sequentially, one by one Active-matrix (AMOLED) that uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel on
OLED
Potential transistor-like device
sensitive transistor, also known as the spin transistor, spin field-effect transistor (spinFET), Datta–Das spin transistor or spintronic transistor (named
Spin_transistor
Form of digital logic family in integrated circuits
employed various types of dynamic logic (rather than just static gates) or pass transistors used as dynamic clocked latches. These techniques can enhance
Depletion-load_NMOS_logic
Type of transistor
The organic electrochemical transistor (OECT) is an organic electronic device which functions like a transistor. The current flowing through the device
Organic electrochemical transistor
Organic_electrochemical_transistor
A synaptic transistor is an electrical device that can learn in ways similar to a neural synapse. It optimizes its own properties for the functions it
Synaptic_transistor
Extremely sensitive solid-state photodetector
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Silicon_photomultiplier
Vacuum tube which generates high-frequency radio waves
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Gyrotron
Late vacuum tube design designed to compete with transistors
junction transistors, and were much smaller than conventional tubes of the day, almost approaching the compactness of early discrete transistor casings
Nuvistor
Vacuum tube used to display images
electromechanical meter, which later came to be used on higher-end tuners when transistor sets lacked the high voltage required to drive the device. The same type
Cathode_ray_tube
A DNA field-effect transistor (DNAFET) is a field-effect transistor which uses the field-effect due to the partial charges of DNA molecules to function
DNA_field-effect_transistor
The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unusual arrangement with respect to emitter blocking of minority carriers. This is
Heterostructure-emitter bipolar transistor
Heterostructure-emitter_bipolar_transistor
Type of resistive heater
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Self-regulating_heater
Power amplifier
and produces a high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip
Gate_driver
Connector used to connect to mains power
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
AC_power_plugs_and_sockets
Electronic component
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
Electronic circuit formed on a small, flat piece of semiconductor material
electronic circuits formed from various electronic components, such as transistors, resistors, and capacitors, and their interconnections. These components
Integrated_circuit
Magnetic core on which the windings of electric transformers and inductors are formed
small magnetic loop (SML) antenna ubiquitous in AM radio broadcast band transistor radios. However, they began to be used in vacuum tube ("valve") radios
Ferrite_core
Integrated circuit customized for a specific task
introduced the Micromatrix family of bipolar diode–transistor logic (DTL) and transistor–transistor logic (TTL) arrays. Complementary metal–oxide–semiconductor
Application-specific integrated circuit
Application-specific_integrated_circuit
Type of MOSFET where the gate is electrically isolated
as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate
Floating-gate_MOSFET
Proportional counter that detects charged particles and photons
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Wire_chamber
Electronic component
reliable low-voltage support capacitor to complement their newly invented transistor. With the development of plastic materials by organic chemists during
Capacitor
Power semiconductor electronic device
applications. Thyristor Gate turn-off thyristor Insulated-gate bipolar transistor Hingorani, Narain G; Laszlo Gyugi (2011). Understanding FACTS. India:
Integrated gate-commutated thyristor
Integrated_gate-commutated_thyristor
Electronic device
A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel
Single-electron_transistor
Converts light into current
is a light-sensitive transistor. A common type of phototransistor, the bipolar phototransistor, is in essence a bipolar transistor encased in a transparent
Photodiode
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide
Oxide_thin-film_transistor
Type of diode
breakdown occurs, internal positive feedback (impact ionization or two transistor feedback) ensures that the diode enters a region of negative dynamic resistance
DIAC
Electrical device
of energy exchanged is controlled by switch S1, which is typically a transistor such as a MOSFET. MOSFETs offer much higher input impedance and lower
Single-ended primary-inductor converter
Single-ended_primary-inductor_converter
Semiconductor device with variable capacitance
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Heterostructure barrier varactor
Heterostructure_barrier_varactor
Device that controls current between electrodes
Beginning in the mid-1960s, thermionic tubes were being replaced by the transistor. However, the cathode-ray tube (CRT), functionally an electron tube/valve
Vacuum_tube
Transistor that uses both electrons and holes as charge carriers
junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such
Bipolar_junction_transistor
Type of transistor developed by Philco in 1953
The surface-barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy-junction transistor and the earlier point-contact
Surface-barrier_transistor
Type of semiconductor
(OLED), organic solar cells, organic field-effect transistors (OFET), electrochemical transistors and recently in biosensing applications. Organic semiconductors
Organic_semiconductor
Electronic device
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Quantum well infrared photodetector
Quantum_well_infrared_photodetector
Form of diode
existing waveguide, and these parts are well known for being extremely static sensitive. On most commercial units, this part is protected with a parallel
Gunn_diode
The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot. Initial demonstration
Ballistic collection transistor
Ballistic_collection_transistor
Miniature adjustable component
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Trimmer_(electronics)
Electric converter
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Charge_pump
Electrical connector designed to work at radio frequencies
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
RF_connector
Gas-filled tube for voltage regulation employing either glow or corona discharge
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Voltage-regulator_tube
Type of electron beam cathode-ray tube
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Charactron
Diode that works using quantum tunneling
state-of-the-art, with better performance at high frequencies than any transistor-based front end. The tunnel diode can also be used as a low-noise microwave
Tunnel_diode
Type of electrical current converter
converter comprises two inductors, two capacitors, a switch (usually a transistor), and a diode. Its schematic can be seen in figure 1. It is an inverting
Ćuk_converter
Part of computer memory
uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The SRAM (static RAM) memory cell is a
Memory_cell_(computing)
Nonlinear two-terminal fundamental circuit element
fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based. Unlike the transistor, the final state of the memristor in terms of
Memristor
Type of diode
changing bias and operating points of active devices such as varicaps and transistors. These circuit configurations are quite common in television tuners and
Varicap
Type of solid-state switch
on/off control CSMT or MCS: MOS composite static induction thyristor PUT or PUJT: programmable unijunction transistor: a thyristor with gate on n-type layer
Thyristor
DC-DC voltage step-down power converter
semiconductors (a diode and a transistor, although modern buck converters frequently replace the diode with a second transistor used for synchronous rectification)
Buck_converter
Light dependent resistor
Light-emitting transistor (LET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode
Photoresistor
Solid-state semiconductor device
current makes an equivalent NPN transistor switch on, which in turn draws current from the base of an equivalent PNP transistor, turning it on also. Part of
TRIAC
System designed to maintain a constant voltage
used with the base of the regulating transistor connected directly to the voltage reference: A simple transistor regulator will provide a relatively constant
Voltage_regulator
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STATIC INDUCTION-TRANSISTOR
STATIC INDUCTION-TRANSISTOR
STATIC INDUCTION-TRANSISTOR